Direct detection of 100-5000 eV electrons with delta-doped silicon CMOS and electron-multiplying CCD imagers

IEEE Transactions on Electron Devices

Volumn 59, Issue 7, 2012, Pages 1988-1992

  Jacquot, Blake C ^a   Hoenk, Michael E ^a   Jones, Todd J ^a   Cunningham, T J ^a   Nikzad, Shouleh ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Charge coupled device (CCD) image sensors; complementary metal oxide semiconductor (CMOS) image sensors; electron detection; silicon radiation detectors

Indexed keywords

BACK-ILLUMINATED; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; DELTA-DOPED; DELTA-DOPING; DIRECT DETECTION; ELECTRON DETECTION; ELECTRON-MULTIPLYING CCD; FULL DEPLETION; HYBRID SILICON; LOW ENERGY ELECTRONS; PARTIAL DEPLETION; SILICON CMOS; SILICON RADIATION DETECTORS; SOLID STATE DETECTORS;

CHARGE COUPLED DEVICES; DIELECTRIC DEVICES; IMAGE SENSORS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DOPING;

ELECTRONS;

EID: 84862638348     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2194715     Document Type: Article

References (17)

1. C. S. Tindall, N. P. Palaio, B. A. Ludewigt, S. E. Holland, D. E. Larson, D. W. Curtis, S. E. McBride, T. Moreau, R. P. Lin, and V. Angelopoulos, "Silicon detectors for low energy particle detection," IEEE Trans. Nucl. Sci., vol. 55, no. 2, pp. 797-801, Apr. 2008.
2. W. Dulinski, A. Braem, M. Caccia, G. Claus, G. Deptuch, D. Grandjean, C. Joram, J. Séguinot, and M. Winter, "Tests of a backside illuminated monolithic CMOS pixel sensor in an HPD set-up," Nucl. Instrum. Methods Phys. Res., vol. 546, pp. 274-280, Jul. 2005.
3. R. Goldstein, S. Nikzad, M. Davis, R. Frahm, D. Slater, and T. J. Jones, "Results of measurements of the response of a delta-doped CCD to neutral and charged particle beams," Adv. Space Res., vol. 47, no. 11, pp. 1931-1936, Jun. 2011.
4. Y. Degerli, M. Besancon, A. Besson, G. Claus, G. Deptuch, W. Dulinski, N. Fourches, M. Goffe, A. Himmi, Y. Li, P. Lutz, F. Orsini, and M. Szelezniak, "Performance of a fast binary readout CMOS active pixel sensor chip designed for charged particle detection," IEEE Trans. Nucl. Sci., vol. 53, no. 6, pp. 3949-3955, Dec. 2006.
5. P. Morrissey, S. Kaye, C. Martin, J. Sheung, S. Nikzad, T. Jones, J. Blacksberg, M. Hoenk, and L. D. Bell, "A novel low-voltage electron bombarded CCD readout," in Proc. SPIE, Orlando, FL, 2006, vol. 6266, p. 626 610.
6. T. Daud, J. R. Janesick, K. Evans, and T. Elliott, "Charge-coupled- device response to electron beam energies of less than 1 keV up to 20 keV," Opt. Eng., vol. 26, no. 8, pp. 686-691, Aug. 1987.
7. F. Sarubbi, L. K. Nanver, T. Scholtes, S. N. Nihtianov, and F. Scholze, "Pure boron-doped photodiodes: A solution for radiation detection in EUV lithography," in Proc. Solid-State Device Res. Conf., Edinburgh, U.K., 2008, vol. 38, pp. 278-281.
8. V. Aebi and K. Costello, "Electron bombarded semiconductor image sensors," in Single-Photon Imaging. New York: Springer-Verlag, 2011, pp. 63-72.
9. P. Jerram, P. J. Pool, R. Bell, D. J. Burt, S. Bowring, S. Spencer, M. Hazelwood, I. Moody, N. Catlett, and P. S. Heyes, "The LLCCD: Lowlight imaging without the need for an intensifier," in Proc. SPIE, San Jose, CA, 2001, vol. 4306, pp. 178-186.
10. M. Hoenk, T. Jones, M. Dickie, F. Greer, T. Cunningham, E. Blazejewski, and S. Nikzad, "Delta-doped back-illuminated CMOS imaging arrays: Progress and prospects," in Proc. SPIE, San Diego, CA, 2009, vol. 7419, p. 741 90T.
11. S. Nikzad, M. Hoenk, F. Greer, T. Jones, B. Jacquot, S. Monacos, J. Blacksberg, D. Schiminovich, E. Hamden, C. Martin, and P. Morrissey, "Delta-doped electron-multiplied CCD with absolute quantum efficiency over 50% in the near to far ultraviolet range for single photon counting applications," Appl. Opt., vol. 51, no. 3, pp. 365-369, Jan. 2012.
12. S. Nikzad, Q. Yu, A. L. Smith, S. T. Elliott, T. J. Jones, and S. T. Elliott, "Direct detection and imaging of low-energy electrons with delta-doped charge-coupled devices," Appl. Phys. Lett., vol. 73, no. 23, pp. 3417-3419, Dec. 1998.
13. S. Nikzad, T. J. Cunningham, M. E. Hoenk, R. P. Ruiz, D. M. Soules, and S. E. Holland, "Direct detection of 0.1-20 keV electrons with delta doped, fully depleted, high purity silicon p-i-n diode arrays," Appl. Phys. Lett., vol. 89, no. 18, pp. 182114-1-182114-3, Oct. 2006.
14. F. Greer, E. Hamden, B. C. Jacquot, M. E. Hoenk, J. Blacksberg, S. P. Monacos, M. R. Dickie, D. Schiminovich, and S. Nikzad, "Atomically precise surface engineering of silicon CCDs for enhanced UV quantum efficiency," submitted for publication, 2012.
15. B. C. Jacquot, S. P. Monacos, M. E. Hoenk, F. Greer, T. J. Jones, and S. Nikzad, "A system and methodologies for absolute quantum efficiency measurements from the vacuum ultraviolet through the near infrared," Rev. Sci. Instrum., vol. 82, no. 4, pp. 043102-1-043102-10, Apr. 2011.
16. P. F. Staub, "Bulk target backscattering coefficient and energy distribution of 0.5-100 keV electrons: An empirical and synthetic study," J. Phys. D, Appl. Phys., vol. 27, no. 7, pp. 1533-1537, Jul. 1994.
17. A. Jablonski, J. Gryko, J. Kraaer, and S. Tougaard, "Elastic electron backscattering from surfaces," Phys. Rev. B, vol. 39, no. 1, pp. 61-71, Jan. 1989.