Tests of a backside illuminated monolithic CMOS pixel sensor in an HPD set-up

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 546, Issue 1-2, 2005, Pages 274-280

  Dulinski, Wojciech ^a   Braem, Andrea ^b   Caccia, Massimo ^c   Claus, Gilles ^a   Deptuch, Grzegorz ^a   Grandjean, Damien ^d   Joram, Christian ^b   Séguinot, Jacques ^b   Winter, Marc ^d  

^a CENTRE DE CALCUL DE L INSTITUT NATIONAL DE PHYSIQUE NUCLEAIRE ET DE PHYSIQUE DES PARTICULES   (France)

^b CERN   (Switzerland)

^c UNIVERSITY OF INSUBRIA   (Italy)

^d INSTITUT DE RECHERCHES SUBATOMIQUES   (France)

Author keywords

Backside illuminated; CMOS; HPD; Low energy electrons detection; Monolithic active pixel sensors

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRON MICROSCOPY; ELECTRONS; IONIZING RADIATION; MICROMETERS; MICROPROCESSOR CHIPS; MONOLITHIC INTEGRATED CIRCUITS; PARTICLE DETECTORS; PHOTONS; PROTONS; RADIOGRAPHY; VLSI CIRCUITS;

BACKSIDE ILLUMINATED; HPD; LOW ENERGY ELECTRONS DETECTION; MONOLITHIC ACTIVE PIXEL SENSORS (MAPS);

SENSORS;

EID: 20444495349     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2005.03.116     Document Type: Conference Paper

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