Interfacial step structure at a (0001) basal twin in Bi 2Te 3

Journal of Electronic Materials

Volumn 41, Issue 6, 2012, Pages 1456-1464

  Medlin, D L ^a   Yang, N Y C ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

bismuth telluride; dislocations; electron microscopy; Grain boundaries; thermoelectrics; twins

Indexed keywords

ANNEALING TWINS; ATOMIC SCALE STRUCTURES; BISMUTH TELLURIDE; DEFECT CONFIGURATIONS; FACE-CENTERED CUBIC; INTERFACE STRUCTURES; MICROSCOPIC STUDY; STEP STRUCTURE; THERMOELECTRIC MATERIAL; THERMOELECTRICS; TWIN BOUNDARIES; TWIN FORMATION; TWINS;

CRYSTALLOGRAPHY; DEFECTS; DISLOCATIONS (CRYSTALS); ELECTRON MICROSCOPES; ELECTRON MICROSCOPY; GRAIN BOUNDARIES; GROWTH (MATERIALS); THERMOELECTRICITY;

BISMUTH;

EID: 84862167812     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-011-1859-7     Document Type: Article

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