Control of thermoelectric properties through the addition of Ag in the Bi0.5Sb1.5Te3alloy

Electronic Materials Letters

Volumn 6, Issue 4, 2010, Pages 201-207

  Lee, J K ^a,b   Park, S D ^b   Kim, B S ^b   Oh, M W ^b   Cho, S H ^b   Min, B K ^b   Lee, H W ^b   Kim, M H ^a  

^a Changwon National University   (South Korea)

^b Korea Electrotechnology Research Institute (KERI)   (South Korea)

Author keywords

Ag addition; Bi0.5Sb1.5Te3; Carrier concentration; Semiconductor; Thermoelectric properties; Twin boundary

Indexed keywords

AG ADDITIONS; BI0.5SB1.5TE3; SEMICONDUCTOR; THERMOELECTRIC PROPERTIES; TWIN BOUNDARIES;

CARRIER CONCENTRATION; CERIUM ALLOYS; CRYSTAL LATTICES; ELECTRIC CONDUCTIVITY; ELECTRIC POWER FACTOR; HOT PRESSING; INGOTS; SEMICONDUCTOR DOPING; SEMICONDUCTOR INSULATOR BOUNDARIES; SILVER; SILVER ALLOYS; SINTERING; THERMAL CONDUCTIVITY; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY;

BISMUTH COMPOUNDS;

EID: 78650997209     PISSN: 17388090     EISSN: None     Source Type: Journal    
DOI: 10.3365/eml.2010.12.201     Document Type: Article

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