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Volumn 182, Issue 2, 2000, Pages 669-678

Preparation of Bi2Te3 films by hot-wall epitaxy and characterization of p-n junction

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; SEMICONDUCTING BISMUTH COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILICA; THIN FILMS;

EID: 0034498170     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200012)182:2<669::AID-PSSA669>3.0.CO;2-R     Document Type: Article
Times cited : (11)

References (23)
  • 8
    • 0004278611 scopus 로고
    • Chapman & Hall, London
    • N.B. HANNEY, Semiconductors, Chapman & Hall, London 1960 (p. 32).
    • (1960) Semiconductors , pp. 32
    • Hanney, N.B.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.