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Volumn 182, Issue 2, 2000, Pages 669-678
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Preparation of Bi2Te3 films by hot-wall epitaxy and characterization of p-n junction
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Author keywords
[No Author keywords available]
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Indexed keywords
ANTIMONY;
ELECTRIC CONDUCTIVITY;
EPITAXIAL GROWTH;
SEMICONDUCTING BISMUTH COMPOUNDS;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DOPING;
SILICA;
THIN FILMS;
HOT-WALL EPITAXY;
SEMICONDUCTING FILMS;
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EID: 0034498170
PISSN: 00318965
EISSN: None
Source Type: Journal
DOI: 10.1002/1521-396X(200012)182:2<669::AID-PSSA669>3.0.CO;2-R Document Type: Article |
Times cited : (11)
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References (23)
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