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Electrochemical and Solid-State Letters

Volumn 14, Issue 7, 2011, Pages

Sub-band-gap photocurrent of an individual defective gan nanowire measured by conductive atomic force microscopy

(3) Chu, Wen Huei a Chiang, Hsin Wei a Liu, Chuan Pu a

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP ENERGY; BAND GAPS; CATHODOLUMINESCENCE SPECTRA; CONDUCTIVE ATOMIC FORCE MICROSCOPY; GAN NANOWIRES; HIGH DENSITY; INELASTIC TUNNELING PROCESS; INTRINSIC DEFECTS; NEGATIVE DIFFERENTIAL RESISTANCES; PHOTOCURRENT RESPONSE; PHOTON ENERGY;

ATOMIC FORCE MICROSCOPY; DEFECTS; GALLIUM NITRIDE; NANOWIRES;

PHOTOCURRENTS;

EID: 79959543966 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3586793 Document Type: Article

Times cited : (4)

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