Quaternary nitride heterostructure field effect transistors

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 7-8, 2010, Pages 2001-2003

  Rahimzadeh Khoshroo, L ^a   Ketteniss, N ^a   Mauder, C ^a   Behmenburg, H ^a   Woitok, J F ^b   Booker, I ^a   Gruis, J ^a   Heuken, M ^a,c   Vescan, A ^a   Kalisch, H ^a   Jansen, R H ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b PANalyticalBV   (Netherlands)

^c AIXTRON AG   (Germany)

Author keywords

AlInGaN AlN GaN; Electrical properties; Field effect transistor; Interface formation; MOVPE; Structure

Indexed keywords

ALINGAN/ALN/GAN; ELECTRICAL PROPERTY; FIELD EFFECTS; INTERFACE FORMATION; MOVPE; STRUCTURE;

ATOMIC FORCE MICROSCOPY; ELECTRIC PROPERTIES; ELECTRON MOBILITY; ELECTRON MULTIPLIERS; EPITAXIAL GROWTH; GALLIUM NITRIDE; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; METALLORGANIC VAPOR PHASE EPITAXY; ORGANOMETALLICS; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

FIELD EFFECT TRANSISTORS;

EID: 77955825167     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200983614     Document Type: Conference Paper

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