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Volumn 100, Issue 20, 2012, Pages

Vertically integrated submicron amorphous-In 2Ga 2ZnO 7 thin film transistor using a low temperature process

(10) Ho Rha, Sang a,b Jung, Jisim c Soo Jung, Yoon c Jang Chung, Yoon c Ki Kim, Un c Suk Hwang, Eun c Keon Park, Byoung c Joo Park, Tae d Choi, Jung Hae e Seong Hwang, Cheol a,c

a Seoul National University (South Korea)

b SAMSUNG Electronics (South Korea)

c Seoul National University (South Korea)

d Hanyang University (South Korea)

e Korea Institute of Science and Technology (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL LENGTH; CURRENT POLARITY; CURRENT RATIOS; DEVICE PERFORMANCE; FRINGING FIELD EFFECTS; HIGH DEFECT DENSITIES; LOW-TEMPERATURE PROCESS; SUBMICRON; TRANSFER CHARACTERISTICS; VERTICAL STRUCTURES; ZNO;

GALLIUM; SEMICONDUCTING INDIUM COMPOUNDS; TEMPERATURE; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 84861838344 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4717621 Document Type: Article

Times cited : (44)

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