Surface modification of yttria-stabilized-zirconia thin films under various oxygen partial pressures

Thin Solid Films

Volumn 520, Issue 17, 2012, Pages 5826-5831

  Bae, J S ^a   Park, S S ^b   Mun, B S ^c   Park, S H ^b   Hwang, E S ^b   Kim, J ^d   Huh, J ^e   Park, H J ^b   Kim, J S ^b   Yun, H J ^a   Kim, H G ^a   Jeong, S Y ^b   Hwang, J ^b,f   Park, S ^b  

^a Korea Basic Science Institute (KBSI)   (South Korea)

^b Pusan National University   (South Korea)

^c Hanyang University   (South Korea)

^d Gwangju Institute of Science and Technology (GIST)   (South Korea)

^e Chonnam National University   (South Korea)

^f Sungkyunkwan University   (South Korea)

Author keywords

Optical band gap; Oxide thin films; Spectroscopy; Surface structure; X ray diffraction

Indexed keywords

LATERAL DOMAINS; OPTICAL DATA; OXIDE THIN FILMS; OXYGEN PARTIAL PRESSURE; POLYCRYSTALLINE STRUCTURE; PREFERRED ORIENTATIONS; STRUCTURAL AND SPECTROSCOPIC ANALYSIS; STRUCTURAL PHASE TRANSITION; SURFACE CHEMICAL COMPOSITION; TETRAGONAL STRUCTURE; VALENCE BAND SPECTRA; XRD;

ENERGY GAP; PARTIAL PRESSURE; PHOTOELECTRONS; POSITIVE IONS; SPECTROSCOPIC ANALYSIS; SPECTROSCOPY; SURFACE STRUCTURE; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY; YTTRIA STABILIZED ZIRCONIA; YTTRIUM; YTTRIUM ALLOYS; YTTRIUM OXIDE; ZIRCONIA;

THIN FILMS;

EID: 84861822648     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.02.049     Document Type: Article

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