Two-dimensional versus three-dimensional post-deposition grain growth in epitaxial oxide thin films. Influence of the substrate surface roughness

Thin Solid Films

Volumn 515, Issue 18, 2007, Pages 7080-7085

  Bachelet, R ^a   Boulle, A ^a   Soulestin, B ^a   Rossignol, F ^a   Guinebretiere R ^a   Dauger, A ^a  

^a UNIVERSITY OF LIMOGES   (France)

Author keywords

AFM; Epitaxy; High resolution X ray diffraction; Morphology; Oxide islands

Indexed keywords

ATOMIC FORCE MICROSCOPY; DEPOSITION; EPITAXIAL GROWTH; SOL-GEL PROCESS; SURFACE ROUGHNESS; THIN FILMS; X RAY DIFFRACTION;

DOME-SHAPED ISLANDS; EPITAXIAL THIN FILMS; HIGH-RESOLUTION X-RAY DIFFRACTION; OXIDE ISLANDS;

GRAIN GROWTH;

EID: 34249042293     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.02.099     Document Type: Article

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