Twin-free epitaxial films lateral relation between YSZ(111) and Si(111)

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 45, Issue 46-50, 2006, Pages

  Kaneko, Satoru ^a   Akiyama, Kensuke ^a   Oguni, Taku ^b   Ito, Takeshi ^a   Hirabayashi, Yasuo ^a   Ohya, Scishiro ^a   Seo, Koichi ^c   Sawada, Yutaka ^b   Funakubo, Hiroshi ^d   Yoshimoto, Mamoru ^d  

^a KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY   (Japan)

^b TOKYO POLYTECHNIC UNIVERSITY   (Japan)

^c PANalytical   (Japan)

^d TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Epitaxial growth; Orientation; Oxide film; Silicon substrate; Sputtering; Yttrla stabilized zlrconia (YSZ)

Indexed keywords

DEPOSITION; EPITAXIAL GROWTH; SILICON COMPOUNDS; X RAY DIFFRACTION; YTTRIUM COMPOUNDS;

CUBIC RELATION; SINGLE DOMAINS; SLOW DEPOSITION RATE;

EPITAXIAL FILMS;

EID: 34547877243     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.L1328     Document Type: Article

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