The growth-temperature-dependent interface structure of yttria-stabilized zirconia thin films grown on Si substrates

Journal of Physics Condensed Matter

Volumn 22, Issue 1, 2010, Pages

  Park, S S ^a,b   Bae, J S ^b   Park, S ^a  

^a Pusan National University   (South Korea)

^b Korea Basic Science Institute (KBSI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH CONDITIONS; GROWTH MECHANISMS; INTERFACE CHARACTERISTIC; INTERFACE ROUGHNESS; INTERFACE STRUCTURES; PACKING DENSITY; SECOND-NEAREST-NEIGHBOR; SI SUBSTRATES; SILICON SUBSTRATES; TEMPERATURE DEPENDENT; VERY THIN FILMS; X-RAY REFLECTIVITY ANALYSIS; YTTRIA-STABILIZED ZIRCONIA FILMS; YTTRIA-STABILIZED ZIRCONIA THIN FILMS;

CHEMICAL REACTIONS; CHEMICAL SHIFT; FILM GROWTH; GROWTH TEMPERATURE; MAGNETIC FILMS; SEMICONDUCTING SILICON COMPOUNDS; THIN FILMS; YTTRIA STABILIZED ZIRCONIA; YTTRIUM ALLOYS; ZIRCONIA; ZIRCONIUM;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 72249115584     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/22/1/015002     Document Type: Article

References (25)

1. Ogale S B (ed) 2005 Thin Films and Heterostructures for Oxide Electronics (Berlin: Springer)
2. Fukumoto H, Imura T and Osaka Y 1988 Japan. J. Appl. Phys. 27 L1404
3. Behner H, Wecker J, Matthee Th and Sanwer K 1992 Surf. Interface Anal. 18 685
4. Opila R L, Wilk G D, Alam M A, van Dover R B and Busch B W 2002 Appl. Phys. Lett. 81 1788
5. Yu Z, Liang Y, Overgaard C, Hu X, Curless J, Li H, Wei Y, Craigo B, Jordan D, Droopad R, Finder J, Eisenbeiser K, Marshall D, Moore K, Kulik J and Fejes P 2004 Thin Solid Films 462/463 51
6. Kaneko S, Akiyama K, Oguni T, Ito T, Hirabayashi Y, Ohya S, Seo K, Sawada Y, Funakubo H and Yoshimoto M 2006 Japan. J. Appl. Phys. 45 L1328
7. Tiwari P, Kanetkar S M, Sharan S and Narayan J 1990 Appl. Phys. Lett. 57 1578
8. Tokita K and Hoshi H 2000 Japan. J. Appl. Phys. 39 5399
9. Horita S, Horii S and Umemoto S 1998 Japan. J. Appl. Phys. 37 5141
10. Barnes P N, Mukhopadhyay S M, Haugan T J, Krishnaswami S, Tolliver J C and Maartense I 2003 IEEE Trans. Appl. Supercond. 13 3643
11. Chow S Y and Wang S 2004 Ceram. Int. 30 1257
12. Kusumori T and Muto H 1999 Physica C 321 247
13. Ikeda S, Sakurai O, Uematsu K, Mizutani N and Kato M 1985 J. Mater. Sci. 20 4593
14. Miyahara Y, Tsukada K and Miuagi H 1988 J. Appl. Phys. 63 2431
15. Hirai T, Teramoto K, Koike H, Nagashima K and Tarui Y 1997 Japan. J. Appl. Phys. 36 5253
16. Kaneko S, Akiyama K, Shimizu Y, Ito T, Yasaka S, Mitsuhashi M, Ohya S, Saito K, Watanabe T, Okamoto S and Funakubo H 2004 Japan. J. Appl. Phys. 43 1532
17. Horita S, Murakawa M and Fujiyama T 1995 Japan. J. Appl. Phys. 34 1942
18. Fork D K, Fenner D B, Connell G A N, Phillips J M and Geballe T H 1990 Appl. Phys. Lett. 57 1137
19. Als-Nielsen J and McMorrow D 2001 Elements of Modern X-Ray Physics (New York: Wiley)
20. Birkholz M 2006 Thin Film Analysis by X-Ray Scattering (Weinheim: Wiley-VCH)
21. Daillant J and Gibaud A (ed) 2009 X-Ray and Neutron Reflectivity, Principles and Applications (Berlin: Springer)
22. Briggs D and Seah M P 1990 Practical Surface Analysis vol 1 (New York: Wiley)
23. Watts J F and Wolstenolme J 2003 An Introduction to Surface Analysis by XPS and AES (New York: Wiley)
24. Parratt L G 1954 Phys. Rev. 95 359
25. Lide D R (ed) 2006 CRC Handbook of Chemistry and Physics (Boca Raton, FL: Taylor and Francis) Internet Version http://www.hbcpnetbase.com