Scaling behavior and velocity enhancement in self-aligned N-polar GaN/AlGaN HEMTs with maximum fT of 163 GHz

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2011, Pages 141-142

  Nidhi, ^a   Dasgupta, S ^b   Brown, D F ^a   Speck, J S ^a   Mishra, U K ^a  

^a University of California   (United States)

^b Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE DESIGN; HIGH-FREQUENCY APPLICATIONS; POTENTIAL TECHNOLOGIES; SCALING BEHAVIOR; SELF-ALIGNED; SELF-ALIGNED DEVICES; VELOCITY ENHANCEMENT; VERTICAL SCALING;

ASPECT RATIO;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84880755745     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2011.5994456     Document Type: Conference Paper

References (5)

1. Nidhi et al., IEDM 2009
2. S. Keller et al., JAP, Mar 2011
3. S. Dasgupta et al., APL, 96, 143504 (2010)
4. Nidhi et al., IEEE EDL 32, 33 (2011).
5. Jessen et al., IEEE TED 54, 2589 (2007).