Coexistence of memristive behaviors and negative capacitance effects in single-crystal TiO 2 thin-film-based devices

IEEE Electron Device Letters

Volumn 33, Issue 6, 2012, Pages 890-892

  Hu, P ^a,b   Lu, J Q ^a   Wu, S X ^a   Lv, Q B ^a   Li, S W ^a  

^a SUN YAT SEN UNIVERSITY   (China)

^b UNIVERSITY OF SOUTH CHINA   (China)

Author keywords

Multilevel memory state; negative capacitance; oxygen vacancy; resistive switching

Indexed keywords

ACTIVE LAYER; INITIAL STATE; LOW RESISTANCE; MEMRISTIVE BEHAVIOR; MOLECULAR BEAM EPITAXIAL; MULTILEVEL MEMORY; NB-DOPED SRTIO; NEGATIVE CAPACITANCE; NEGATIVE CAPACITANCE EFFECT; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; REVERSE BIAS; TIO;

OXYGEN VACANCIES; PLATINUM; STRONTIUM TITANATES; SWITCHING SYSTEMS; TITANIUM DIOXIDE;

CAPACITANCE;

EID: 84861677878     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2191133     Document Type: Article

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