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EPJ Applied Physics

Volumn 58, Issue 2, 2012, Pages

Effect of N doping on hole density of Cu 2O:N films prepared by the reactive magnetron sputtering method

(7) Li, B B a,b Lin, L a Shen, H L a Boafo, F E a Chen, Z F a Liu, B b Zhang, R b

a NANJING UNIVERSITY OF AERONAUTICS AND ASTRONAUTICS (China)

b NANJING UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE QUALITY; CRYSTALLINE STRUCTURE; FLOW RATIOS; FOUR-POINT PROBE; GLASS SUBSTRATES; HALL EFFECT MEASUREMENT; HOLE DENSITIES; N-DOPED; N-DOPING; P-TYPE; PEAK SHIFT; REACTIVE MAGNETRON SPUTTERING METHOD; SINGLE PHASE; SQUARE RESISTANCE; VAN DER PAUW METHOD; XRD PATTERNS;

CRYSTALLINE MATERIALS; ELECTRONIC PROPERTIES; MAGNETRON SPUTTERING; METALLIC FILMS; SUBSTRATES; X RAY DIFFRACTION;

COPPER;

EID: 84861616171 PISSN: 12860042 EISSN: 12860050 Source Type: Journal
DOI: 10.1051/epjap/2012120020 Document Type: Article

Times cited : (16)

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