Formation of AlN on sapphire surfaces by high-temperature heating in a mixed flow of H 2 and N 2

Journal of Crystal Growth

Volumn 350, Issue 1, 2012, Pages 60-65

  Kumagai, Yoshinao ^a   Igi, Takahiro ^a   Ishizuki, Masanari ^b   Togashi, Rie ^a   Murakami, Hisashi ^a   Takada, Kazuya ^b   Koukitu, Akinori ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^b TOKUYAMA CORPORATION   (Japan)

Author keywords

A1. Surface processes; A3. Chemical vapor deposition processes; B1. Nitrides; B1. Sapphire; B2. Semiconducting aluminum compounds

Indexed keywords

ALN; CHEMICAL VAPOR DEPOSITION PROCESS; HIGH TEMPERATURE; MIXED FLOWS; MOLAR FRACTIONS; SAPPHIRE SUBSTRATES; SAPPHIRE SURFACE; SURFACE PROCESS; TEMPERATURE RANGE; THERMO DYNAMIC ANALYSIS;

CHEMICAL VAPOR DEPOSITION; HEAT TREATMENT; NITRIDES; SAPPHIRE; SEMICONDUCTOR DEVICE STRUCTURES; THERMOANALYSIS;

ATMOSPHERIC MOVEMENTS;

EID: 84861595265     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.12.023     Document Type: Conference Paper

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