Optimization of tunneling currents through cnt and si nanocrystals embedded gate oxide metal-oxide-semiconductor structure using genetic algorithm approach for memory device application

Journal of Computational and Theoretical Nanoscience

Volumn 9, Issue 3, 2012, Pages 434-440

  Dash, Satyabhama ^a   Chakraborty, Gargi ^b   Sengupta, Amretashis ^a   Kumar, Chandan Sarkar ^a  

^a JADAVPUR UNIVERSITY   (India)

^b FUTURE INSTITUTE OF ENGINEERING AND MANAGEMENT   (India)

Author keywords

CNT; Genetic Algorithm; MOS Memory; Optimization; Si Nanoparticle

Indexed keywords

CNT; DEVICE APPLICATION; DIRECT TUNNELING CURRENTS; F-N TUNNELING; FOWLER-NORDHEIM; FOWLER-NORDHEIM TUNNELING; GATE CURRENT; GATE FIELD; GATE OXIDE; GENETIC ALGORITHM APPROACH; HIGH-FIELD; LOW FIELD; METAL OXIDE SEMICONDUCTOR STRUCTURES; MOS STRUCTURE; ONSET VOLTAGES; QUANTUM-MECHANICAL TUNNELING; SI NANOCRYSTAL; SI NANOPARTICLES; SILICON NANOCRYSTALS; TUNNELING CURRENT;

ELECTRON TUNNELING; GATE DIELECTRICS; GATES (TRANSISTOR); MOS DEVICES; NANOPARTICLES; OPTIMIZATION; SEMICONDUCTING SILICON; SILICA; SILICON;

GENETIC ALGORITHMS;

EID: 84861545749     PISSN: 15461955     EISSN: 15461963     Source Type: Journal    
DOI: 10.1166/jctn.2012.2043     Document Type: Article

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