Unified compact theory of tunneling gate current in metal-oxide- semiconductor structures: Quantum and image force barrier lowering

Journal of Applied Physics

Volumn 92, Issue 7, 2002, Pages 3724-3729

  Quan, Wu Yun ^a   Kim, Dae M ^a   Cho, Myoung Kwan ^b  

^a Korea Institute for Advanced Study   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; COMPACT MODEL; DEEP SUB-MICRON; DIRECT TUNNELING; FOWLER-NORDHEIM TUNNELING; GATE CURRENT; IMAGE FORCE; INVERSION REGIONS; MEASURED DATA; METAL-OXIDE; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOSFETS; QUANTUM BARRIERS; SEMICONDUCTOR STRUCTURE; SUBBANDS; TUNNELING GATE CURRENT;

NUMERICAL ANALYSIS;

MOSFET DEVICES;

EID: 18644366115     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1504173     Document Type: Article

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