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Materials Chemistry and Physics

Volumn 134, Issue 2-3, 2012, Pages 1203-1207

Mechanisms of ZnO buffer layer in bottom gate ZnO:Al transparent thin film transistors

(4) Lin, Yung Hao a Lee, Hsin Ying a Lee, Ching Ting a Chou, Cheng Hsu b

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b InnoLux Display Corporation (Taiwan)

Author keywords

Al doped ZnO channel layer; Magnetron cosputter system; Transparent thin film transistors; ZnO buffer layer

Indexed keywords

AL-DOPED ZNO; BOTTOM GATE; CHANNEL LAYERS; CURRENT RATIOS; FIELD-EFFECT MOBILITIES; GATE INSULATOR; INSULATOR LAYER; LATTICE MISMATCHING; PERFORMANCE IMPROVEMENTS; RADIO FREQUENCIES; ROOM TEMPERATURE; SUBTHRESHOLD SLOPE; SURFACE STATE DENSITY; TRANSPARENT THIN FILM TRANSISTOR; ZNO; ZNO BUFFER LAYER;

ALUMINUM; BUFFER LAYERS; THIN FILM TRANSISTORS; THIN FILMS;

ZINC OXIDE;

EID: 84861531631 PISSN: 02540584 EISSN: None Source Type: Journal
DOI: 10.1016/j.matchemphys.2012.04.023 Document Type: Article

Times cited : (10)

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