Passivation effect of Poly-Si thin-film transistors with fluorine-ion-implanted spacers

IEEE Electron Device Letters

Volumn 29, Issue 6, 2008, Pages 603-605

  Chen, Wei Ren ^a   Chang, Ting Chang ^b   Liu, Po Tsun ^a   Wu, Chen Jung ^c   Tu, Chun Hao ^a   Sze, S M ^a   Chang, Chun Yeng ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

Fluorine passivation; Ion implantation; Polycrystalline silicon (poly Si); Spacer; Thin film transistor (TFT)

Indexed keywords

ELECTRIC INSULATORS; ELECTRIC LINES; HOT CARRIERS; ION IMPLANTATION; PASSIVATION; POLYSILICON; TRANSCONDUCTANCE;

CURRENT CROWDING EFFECT; DRAIN STRUCTURE; FLUORINE ATOMS; FLUORINE PASSIVATION; SUBTHRESHOLD SLOPE;

THIN FILM TRANSISTORS;

EID: 44849142947     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.922550     Document Type: Article

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