Improvement of hydrogenated amorphous-silicon TFT performances with low-κ siloxane-based hydrogen silsesquioxane (HSQ) passivation layer

IEEE Electron Device Letters

Volumn 27, Issue 11, 2006, Pages 902-904

  Chang, Ta Shan ^a   Chang, Ting Chang ^b   Liu, Po Tsun ^c   Chang, Tien Shan ^a   Tu, Chun Hao ^c   Yeh, Feng Sheng ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Low dielectric constant; Passivation; Thin film transistor (TFT)

Indexed keywords

AMORPHOUS SILICON; HYDROGEN BONDS; LIQUID CRYSTAL DISPLAYS; PASSIVATION; PERMITTIVITY;

APERTURE RATIO; BRIGHTNESS; HYDROGEN SILSESQUIOXANE; LIGHT TRANSMITTANCE; PLANARIZATION;

THIN FILM TRANSISTORS;

EID: 33750502434     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.884721     Document Type: Article

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