Quantitative analysis of surface morphology of boron-doped zinc oxide for microcrystalline silicon solar cells

Japanese Journal of Applied Physics

Volumn 51, Issue 5 PART 1, 2012, Pages

  Krajangsang, Taweewat ^a   Hiza, Shuichi ^a   Hayashi, Teruaki ^a   Yunaz, Ihsanul Afdi ^a   Hongsingthong, Aswin ^a   Miyajima, Shinsuke ^a   Konagai, Makoto ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI:H; BORON-DOPED; EVALUATION FACTOR; FILL FACTOR; HYDROGENATED MICROCRYSTALLINE SILICON; OPTIMUM CONDITIONS; PLASMA TREATMENT; TANDEM SOLAR CELLS; ZNO;

CONDUCTIVE FILMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROCRYSTALLINE SILICON; OPEN CIRCUIT VOLTAGE; PLASMA APPLICATIONS; SURFACE MORPHOLOGY;

ZINC OXIDE;

EID: 84861512606     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.51.051101     Document Type: Article

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