Carrier Transport in Polycrystalline Silicon Photovoltaic Layer on Highly Textured Substrate

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 11, 2003, Pages 6753-6758

  Muhida, Riza ^a   Kawamura, Tomohiro ^a   Harano, Tomokazu ^a   Okajima, Masaya ^a   Matsui, Takuya ^a,c   Toyama, Toshihiko ^a   Okamoto, Hiroaki ^a   Honda, Shinya ^b   Takakura, Hideyuki ^b   Hamakawa, Yoshihiro ^b  

^a OSAKA UNIVERSITY   (Japan)

^b RITSUMEIKAN UNIVERSITY   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

AC conductivity; Carrier transport; Fermi energy; Light trapping; Poly Si thin film solar cell; Preferential orientation; Texture; VHF PECVD

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRODES; ELECTRON MOBILITY; ETCHING; LIGHT ABSORPTION; MICROSTRUCTURE; PHOTOCURRENTS; REFLECTION; SILICON; SOLAR CELLS; THIN FILMS;

BAND GAP; HOLE CONDUCTIVITIES; LIGHT TRAPPING;

POLYCRYSTALLINE MATERIALS;

EID: 1642447051     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.6753     Document Type: Article

References (18)

1. Some of the papers express the poly-Si thin films deposited at a low temperature by PECVD as microcrystalline Si(μc-Si).
2. J. Meier, R. Fluekiger, H. Keppner, and A. Shah: Proc. 1st World Conference on Photovoltaic Energy Conversion (WCPEC), Hawaii, 1994, p. 409.
3. K. Yamamoto, A. Nakajima, T. Suzuki, M. Yoshimi, H. Nishio and M. Izumina: Jpn. J. Appl. Phys. 33 (1994) L1751.
4. M. A. Green: High Efficiency Silicon Solar Cells (Trans Tech Publications, Switzerland, 1987) p. 69.
5. O. Kluth, O. Vetterl, R. Carius, F. Finger, S. Wieder, B. Rech and H. Wagner: Mater. Res. Soc. Symp. Proc. 557 (1999) 731.
6. Y. Nasuno, M. Kondo and A. Matsuda: Jpn. J. Appl. Phys. 40 (2001) L303.
7. T. Matsui, M. Tsukiji, H. Saika, T. Toyama and H. Okamoto: J. Non-Cryst. Solids 299-302 (2002) 1152.
8. O. Vetterl, P. Hapke, O. Kluth, A. Lambertz, S. Wieder, B. Rech, F. Finger and H. Wagner: Solid State Phenom. 67-68 (1999) 101.
9. N. Wyrsch, C. Droz, L. Feitknecht, M. Goerlitzer, U. Kroll, J. Meier, P. Torres, E. Vallat-Sauvain, A. Shah and M. Vanecek: Mater. Res. Soc. Symp. Proc. 609 (2000) A15.1.
10. T. Matsui, M. Tsukiji, H. Saika, T. Toyama and H. Okamoto: Jpn. J. Appl. Phys. 41 (2002) 20.
11. M. Goerlitzer. P. Torres, N. Beck, N. Wyrsch and Shah: J. Non-Cryst. Solids 227-230 (1998) 996.
12. J. Kocka, A. Fejfar, V. Vorlicek, H. Stuchlikova and J. Stuchlik: Mater. Res. Soc. Symp. Proc. 557 (1999) 483.
13. T. Matsui, R. Muhida, T. Kawamura, H. Saika, T. Toyama, H. Okamoto, T. Yamazaki, S. Honda, H. Takakura and Y. Hamakawa: Appl. Phys. Lett. 81 (2002) 4751.
14. R. Muhida, T. Matsui, T. Kawamura, T. Toyama, H. Okamoto, S. Honda, H. Takakura and Y. Hamakawa: Solid State Phenom. 93 (2003) 115.
15. H. Iida, N. Shiba, T. Mishuku, H. Karasawa, A. Ito, M. Yamanaka and Y. Hayashi: IEEE Electron Devices Lett. 4 (1983) 157.
16. T. Matsui: Ph.D. Thesis, Graduate School of Engineering Science, Osaka University, 2002.
17. Y. Nasuno, M. Kondo and A. Matsuda: Appl. Phys. Lett. 78 (2001) 2330.
18. H. Okamoto, H. Kida, S. Nomura, K. Fukumoto and Y. Hamakawa: J. Appl. Phys. 54 (1983) 3236.