Identification of compositionally invariant deep levels introduced by plastic strain in epitaxial Ge0.30Si0.70 and deformed bulk Si

Applied Physics Letters

Volumn 69, Issue 14, 1996, Pages 2110-2112

  Grillot, P N ^a   Ringel, S A ^a  

^a Ohio State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; BAND STRUCTURE; COMPOSITION; DEEP LEVEL TRANSIENT SPECTROSCOPY; DISLOCATIONS (CRYSTALS); MATHEMATICAL MODELS; PLASTIC DEFORMATION; SEMICONDUCTING SILICON; STRAIN;

DEEP HOLE TRAPS; GERMANIUM SILICIDE; VALENCE BAND ENERGY;

SEMICONDUCTING GERMANIUM COMPOUNDS;

EID: 6044224858     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116896     Document Type: Article

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