Radiation induced defects in Cu(In,Ga)Se2 solar cells-comparison of electron and proton irradiation

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn 2000-January, Issue , 2000, Pages 1032-1037

  Rau, U ^a   Jasenek, A ^a   Schock, H W ^a   Werner, J H ^a   La Roche, G ^b   Robben, A ^c   Bogus, K ^c  

^a UNIVERSITY OF STUTTGART   (Germany)

^b AIRBUS GROUP INNOVATIONS   (Germany)

^c EUROPEAN SPACE AGENCY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; EFFICIENCY; ELECTRON IRRADIATION; GALLIUM; HETEROJUNCTIONS; IRRADIATION; OPEN CIRCUIT VOLTAGE; RADIATION; SEMICONDUCTING SELENIUM COMPOUNDS; SOLAR CELLS;

EFFICIENCY FACTOR; ELECTRICAL ANALYSIS; HETEROJUNCTION SOLAR CELLS; IRRADIATED DEVICES; IRRADIATED SAMPLES; IRRADIATION EXPERIMENTS; POWER CONVERSION EFFICIENCIES; RADIATION INDUCED DEFECTS;

PROTON IRRADIATION;

EID: 84949563932     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2000.916063     Document Type: Conference Paper

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