Microstructure of nanocrystalline SiC films deposited by modified plasma-enhanced chemical vapor deposition

Optical Materials

Volumn 20, Issue 3, 2002, Pages 177-181

  Zhang, Hongtao ^a,b   Xu, Zhongyang ^a  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b HUBEI UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Nanocrystalline film; Power density; Silicon carbide

Indexed keywords

LIGHT TRANSMISSION; METHANE; MICROSTRUCTURE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; SILANES; SILICON CARBIDE; STOICHIOMETRY; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

POWER DENSITY;

NANOSTRUCTURED MATERIALS;

EID: 0036789043     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-3467(02)00046-0     Document Type: Article

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