Mechanical stress in PECVD a-SiC:H: Aging and plasma treatments effects

Materials Science in Semiconductor Processing

Volumn 7, Issue 4-6 SPEC. ISS., 2004, Pages 301-305

  Jousseaume, V ^a   Rochat, N ^a   Favennec, L ^b   Renault, O ^a   Passemard, G ^b  

^a CEA LETI   (France)

^b STMICROELECTRONICS   (France)

Author keywords

A SiC:H; FTIR; Low k; Stress

Indexed keywords

ABSORPTION; DIELECTRIC MATERIALS; INFRARED SPECTROSCOPY; PLASMAS; SILICON CARBIDE; STRESS ANALYSIS; SURFACE REACTIONS; WATER;

MECHANICAL STRESS; MOISTURE ABSORPTION; PLASMA TREATMENT EFFECTS; SILICON CARBIDE FILMS;

CHEMICAL VAPOR DEPOSITION;

EID: 9544229725     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2004.09.109     Document Type: Conference Paper

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