Sb and Se substitution in CsBi 4Te 6: The semiconductors CsM 4Q 6 (M = Bi, Sb; Q = Te, Se), Cs 2Bi 10Q 15, and CsBi 5Q 8

Chemistry of Materials

Volumn 24, Issue 10, 2012, Pages 1854-1863

  Chung, Duck Young ^a   Uher, Ctirad ^b   Kanatzidis, Mercouri G ^a,c  

^a ARGONNE NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF MICHIGAN   (United States)

^c NORTHWESTERN UNIVERSITY   (United States)

Author keywords

chalcogenide; crystal growth; electronic materials; homologous series; narrow bandgap semiconductors

Indexed keywords

ADJUSTABLE PARAMETERS; CRYSTALLOGRAPHIC SITES; ELECTRICAL CONDUCTIVITY; ELECTRONIC MATERIALS; HOMOLOGOUS SERIES; INTERLAYER SPACES; LOW TEMPERATURE REGIONS; METALLIC BEHAVIORS; NARROW BAND GAP; P-TYPE CONDUCTION; PARENT COMPOUNDS; ROOM TEMPERATURE; SITE PREFERENCES; STRUCTURAL MOTIFS; THERMOELECTRIC APPLICATION; TRANSPORT BEHAVIOR;

CESIUM; CHALCOGENIDES; CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; PHASE CHANGE MEMORY; SEMICONDUCTOR DOPING; SODIUM CHLORIDE; SOLID SOLUTIONS; THERMAL CONDUCTIVITY;

BISMUTH COMPOUNDS;

EID: 84861366668     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/cm300490v     Document Type: Article

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