A new thermoelectric material: CsBi4Te6

Journal of the American Chemical Society

Volumn 126, Issue 20, 2004, Pages 6414-6428

  Chung, Duck Young ^a   Hogan, Tim P ^b   Rocci Lane, Melissa ^c   Brazis, Paul ^c   Ireland, John R ^c   Kannewurf, Carl R ^c   Bastea, Marina ^d   Uher, Ctirad ^d   Kanatzidis, Mercouri G ^a  

^a MICHIGAN STATE UNIVERSITY   (United States)

^b Michigan State University   (United States)

^c Northwestern University   (United States)

^d UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CRYSTALLIZATION; SEMICONDUCTOR MATERIALS; THERMAL CONDUCTIVITY; THERMAL EFFECTS; THERMOELECTRICITY;

MONOCLINIC SPACE; THERMOELECTRIC MATERIALS;

CESIUM COMPOUNDS;

BISMUTH DERIVATIVE; CESIUM; TELLURIUM DERIVATIVE;

ANISOTROPY; ARTICLE; CHEMICAL REACTION; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; LOW TEMPERATURE PROCEDURES; MATERIAL STATE; PHYSICAL CHEMISTRY; SEMICONDUCTOR; SYNTHESIS; THERMAL CONDUCTIVITY; THERMOELECTRIC MATERIAL;

EID: 2442657785     PISSN: 00027863     EISSN: None     Source Type: Journal    
DOI: 10.1021/ja039885f     Document Type: Article

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