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Volumn 13, Issue 2, 2001, Pages 622-633

A2Bi8Se13 (A = Rb, Cs), CsBi3.67Se6, and BaBi2Se4: New ternary semiconducting bismuth selenides

(12) Iordanidis, L a Brazis, P W b Kyratsi, T a Ireland, J b Lane, M b Kannewurf, C R b Chen, W c Dyck, J S c Uher, C c Ghelani, N A d Hogan, T d Kanatzidis, M G a

a MICHIGAN STATE UNIVERSITY (United States)

b Northwestern University (United States)

c UNIVERSITY OF MICHIGAN (United States)

d Michigan State University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH DERIVATIVE; SELENIDE;

ARTICLE; CRYSTAL STRUCTURE; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; REACTION ANALYSIS; SEMICONDUCTOR; STRUCTURE ANALYSIS; SYNTHESIS; TEMPERATURE DEPENDENCE; X RAY DIFFRACTION;

EID: 0035090511 PISSN: 08974756 EISSN: None Source Type: Journal
DOI: 10.1021/cm000734a Document Type: Article

Times cited : (47)

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