1300 nm wavelength InAs quantum dot photodetector grown on silicon

Optics Express

Volumn 20, Issue 10, 2012, Pages 10446-10452

  Sandall, Ian ^a   Ng, Jo Shien ^a   David, John P R ^a   Tan, Chee Hing ^a   Wang, Ting ^b   Liu, Huiyun ^b  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM ARSENIDE; AVALANCHE DIODES; GERMANIUM; IMPACT IONIZATION; INDIUM ARSENIDE; LIGHT MODULATORS; PHOTODIODES; SEMICONDUCTOR QUANTUM DOTS;

ABSORPTION PEAKS; AVALANCHE BREAKDOWN; BARRIER LAYERS; EPITAXIALLY GROWN; FIXED WAVELENGTH; GAAS; GE ON SI PHOTODIODES; INAS QUANTUM DOTS; OPTICAL AND ELECTRICAL PROPERTIES; ORDERS OF MAGNITUDE; PEAK RESPONSIVITY; QUANTUM CONFINED STARK EFFECT; RED SHIFT; RESPONSIVITY; REVERSE BIAS; SILICON SUBSTRATES;

ELECTRIC PROPERTIES;

GERMANIUM; INDIUM; INDIUM ARSENIDE; ORGANOARSENIC DERIVATIVE; QUANTUM DOT; SILICON;

ABSORPTION; ARTICLE; CHEMISTRY; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; OPTICS; PHOTOCHEMISTRY; QUANTUM THEORY; SURFACE PROPERTY; TRANSMISSION ELECTRON MICROSCOPY;

ABSORPTION; ARSENICALS; GERMANIUM; INDIUM; MATERIALS TESTING; MICROSCOPY, ELECTRON, TRANSMISSION; NANOTECHNOLOGY; OPTICS AND PHOTONICS; PHOTOCHEMISTRY; QUANTUM DOTS; QUANTUM THEORY; SILICON; SURFACE PROPERTIES;

EID: 84861135666     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.20.010446     Document Type: Article

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