Quantum-confined Stark effect and built-in dipole moment in self-assembled InAs/GaAs quantum dots

Applied Physics Letters

Volumn 85, Issue 14, 2004, Pages 2791-2793

  Jin, Peng ^a   Li, C M ^a   Zhang, Z Y ^a   Liu, F Q ^a   Chen, Y H ^a   Ye, X L ^a   Xu, B ^a   Wang, Z G ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; ELECTRIC FIELDS; ELECTRON ENERGY LEVELS; HIGH ENERGY ELECTRON DIFFRACTION; LOW TEMPERATURE EFFECTS; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

DC-BIASED ELECTROREFLECTANCE; DIPOLE MOMENT; QUANTUM-CONFINED STARK EFFECTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 8344272901     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1801678     Document Type: Article

References (18)

1. D. Bimberg, M. Grundmann, and N. N. Ledentsov, Quantum Dot Heterostructures (Wiley, Chichester, UK, 1999), and references therein.
2. O. Qasaimeh, K. Kamath, P. Bhattacharya, and J. Phillips, Appl. Phys. Lett. 72, 1275 (1998).
3. M. Grundmann, O. Stier, and D. Bimberg, Phys. Rev. B 52, 11969 (1995).
4. M. A. Cusack, P. R. Briddon, and M. Jaros, Phys. Rev. B 54, R2300 (1996).
5. K. Chang and J.-B Xia, Solid State Commun. 104, 351 (1997).
6. J. A. Barker and E. P. O'Reilly, Phys. Rev. B 61, 13840 (2000).
7. W. Sheng and J.-P Leburton, Phys. Rev. B 63, 161301 (2001).
8. P. W. Fry, I. E. Itskevich, D. J. Mowbray, M. S. Skolnick, J. J. Finley, J. A. Barker, E. P. O'Reilly, L. R. Wilson, I. A. Larkin, P. A. Maksym, M. Hopkinson, M. Al-Khafaji, J. P. R. David, A. G. Cullis, G. Hill, and J. C. Clark, Phys. Rev. Lett. 84, 733 (2000).
9. I. E. Itskevich, S. I. Rybchenko, I. I. Tartakovskii, S. T. Stoddart, A. Levin, P. C. Main, L. Eaves, M. Henini, and S. Parnell, Appl. Phys. Lett. 76, 3932 (2000).
10. T. M. Hsu, W.-H. Chang, C. C. Huang, N. T. Yeh, and J.-I. Chyi, Appl. Phys. Lett. 78, 1760 (2001).
11. Z. Chen, E.-T. Kim, and A. Madhukar, Appl. Phys. Lett. 80, 2770 (2002).
12. F. Findeis, M. Baier, E. Beham, A. Zrenner, and G. Abstreiter, Appl. Phys. Lett. 78, 2958 (2001).
13. S. Raymond, J. P. Reynolds, J. L. Merz, S. Fafard, Y. Feng, and S. Charbonneau, Phys. Rev. B 58, R13415 (1998).
14. A. Passaseo, M. De Vittorio, M. T. Todaro, I. Tarantini, M. De Giorgi, R. Cingolani, A. Taurino, M. Catalano, A. Fiore, A. Markus, J. X. Chen, C. Paranthoen, U. Oesterle, and M. Ilegems, Appl. Phys. Lett. 82, 3632 (2003).
15. H. Shen and M. Dutta, J. Appl. Phys. 78, 2151 (1995).
16. P. Jin, X. Q. Meng, Z. Y. Zhang, C. M. Li, B. Xu, F. Q. Liu, Z. G. Wang, Y. G. Li, C. Z. Zhang, and S. H. Pan, J. Appl. Phys. 93, 4169 (2003).
17. F. H. Pollak, in Group III Nitride Semiconductor Compounds: Physics and Applications, edited by B. Gil (Oxford University Press, New York, 1998), p. 158.
18. It has been found theoretically for two-stacked InAs/GaAs QDs by Sheng and Leburton [W. Sheng and J.-P Leburton, Phys. Rev. Lett. 88, 167401 (2002)] that Eq. (2) is invalid when the two dot layers are separated by a distance smaller than 4.0 nm. However, for our sample (7.0 nm nominal deposition thickness for GaAs spacers and 2.0 nm average height for InAs QDs obtained by AFM measurement), it is considered to be the truth that the separation between two neighboring dot layers is larger than 4.0 nm.