-
1
-
-
0032074892
-
Fully-Depleted SOI CMOS for Analog Applications
-
J. P. Colinge. "Fully-Depleted SOI CMOS for Analog Applications", IEEE Trans. Electron Devices, vol. 45, n. 5, pp. 1010-1016, 1998.
-
(1998)
IEEE Trans. Electron Devices
, vol.45
, Issue.5
, pp. 1010-1016
-
-
Colinge, J.P.1
-
2
-
-
0028548799
-
Comparison of SOI versus bulk Performances of CMOS micropower single-stage OTAs
-
D. Flandre, J. P. Eggermont, D. De Ceuster and P Jespers, "Comparison of SOI versus bulk Performances of CMOS micropower single-stage OTAs", Electronics Letters, vol. 30, n. 23, pp. 1933-1934, 1994.
-
(1994)
Electronics Letters
, vol.30
, Issue.23
, pp. 1933-1934
-
-
Flandre, D.1
Eggermont, J.P.2
De Ceuster, D.3
Jespers, P.4
-
4
-
-
0033751937
-
Analog Performance and Application of Graded-Channel Fully Depleted SOI MOSFETs
-
M. A. Pavanello, J. A. Martino and D. Flandre, "Analog Performance and Application of Graded-Channel Fully Depleted SOI MOSFETs", Solid-State Electronics, vol. 44, n. 7, p. 1219-1222, 2000.
-
(2000)
Solid-State Electronics
, vol.44
, Issue.7
, pp. 1219-1222
-
-
Pavanello, M.A.1
Martino, J.A.2
Flandre, D.3
-
5
-
-
0033736623
-
Graded-Channel Fully Depleted Silicon-On-Insulator nMOSFET for Reducing the Parasitic Bipolar Effects
-
M. A. Pavanello, J. A. Martino and D. Flandre, "Graded-Channel Fully Depleted Silicon-On-Insulator nMOSFET for Reducing the Parasitic Bipolar Effects", Solid-State Electronics, vol. 44, n. 6, p. 917-922, 2000.
-
(2000)
Solid-State Electronics
, vol.44
, Issue.6
, pp. 917-922
-
-
Pavanello, M.A.1
Martino, J.A.2
Flandre, D.3
-
6
-
-
0033639792
-
An Asymmetric Channel SOI nMOSFET for Reducing Parasitic Effects and Improving Output Characteristics
-
M. A. Pavanello, J. A. Martino, V. Dessard and D. Flandre, "An Asymmetric Channel SOI nMOSFET for Reducing Parasitic Effects and Improving Output Characteristics", Electrochemical and Solid-State Letters, vol. 1, p. 50-52, 2000.
-
(2000)
Electrochemical and Solid-State Letters
, vol.1
, pp. 50-52
-
-
Pavanello, M.A.1
Martino, J.A.2
Dessard, V.3
Flandre, D.4
-
7
-
-
0030127650
-
Modeling and Application of Fully Depleted SOI MOSFETs for Low Voltage, Low Power Analogue CMOS Circuits
-
D. Flandre, L. F. Ferreira, P. G. A. Jespers and J. P. Colinge, "Modeling and Application of Fully Depleted SOI MOSFETs for Low Voltage, Low Power Analogue CMOS Circuits", Solid-State Electronics, vol. 39, n. 4, pp. 455-460, 1996.
-
(1996)
Solid-State Electronics
, vol.39
, Issue.4
, pp. 455-460
-
-
Flandre, D.1
Ferreira, L.F.2
Jespers, P.G.A.3
Colinge, J.P.4
-
8
-
-
0030247811
-
Improved LOCOS Isolation for Thin-film SOI MOSFETs
-
J. P. Colinge, A. Crahay, D. De Ceuster, V. Dessard and B. Gentinne, "Improved LOCOS Isolation for Thin-film SOI MOSFETs", Electronics Letters, vol. 32, n. 19, pp. 1834-1835, 1996.
-
(1996)
Electronics Letters
, vol.32
, Issue.19
, pp. 1834-1835
-
-
Colinge, J.P.1
Crahay, A.2
De Ceuster, D.3
Dessard, V.4
Gentinne, B.5
-
9
-
-
0032188612
-
An MOS Transistor Model for Analog Circuit Design
-
A. I. A. Cunha, M. C. Schneider and C. Galup-Montoro, "An MOS Transistor Model for Analog Circuit Design", IEEE Journal of Solid-State Circuits, vol. 33, n. 10, pp. 1510-1519, 1998.
-
(1998)
IEEE Journal of Solid-State Circuits
, vol.33
, Issue.10
, pp. 1510-1519
-
-
Cunha, A.I.A.1
Schneider, M.C.2
Galup-Montoro, C.3
-
10
-
-
0030241117
-
D Based Methodology for the Design of CMOS Analog Circuits and Its Application to the Synthesis of a Silicon-On-Insulator Micropower OTA
-
D Based Methodology for the Design of CMOS Analog Circuits and Its Application to the Synthesis of a Silicon-On-Insulator Micropower OTA", IEEE Journal of Solid-State Circuits, vol. 31, n. 9, pp. 1314-1319, 1996.
-
(1996)
IEEE Journal of Solid-State Circuits
, vol.31
, Issue.9
, pp. 1314-1319
-
-
Silveira, F.1
Flandre, D.2
Jespers, P.G.A.3
-
11
-
-
0000903370
-
Potential and modeling of 1 μm SOI CMOS operational transconductance amplifiers for applications up to 1 GHz
-
J. P. Eggermont, D. Flandre, J. P. Raskin and J. P. Colinge, "Potential and modeling of 1 μm SOI CMOS operational transconductance amplifiers for applications up to 1 GHz.", IEEE Journal of Solid-State Circuit, vol. 33, n. 4, pp. 640-643, 1998.
-
(1998)
IEEE Journal of Solid-State Circuit
, vol.33
, Issue.4
, pp. 640-643
-
-
Eggermont, J.P.1
Flandre, D.2
Raskin, J.P.3
Colinge, J.P.4
-
12
-
-
0025464376
-
Measurement of Intrinsic Gate Capacitances of SOI MOSFET's
-
D. Flandre., F. Van de Wiele, P. G. A. Jespers and M. Haond, "Measurement of Intrinsic Gate Capacitances of SOI MOSFET's", IEEE Trans. Electron Devices, vol. 11, n. 7, pp. 291-293, 1990.
-
(1990)
IEEE Trans. Electron Devices
, vol.11
, Issue.7
, pp. 291-293
-
-
Flandre, D.1
Van De Wiele, F.2
Jespers, P.G.A.3
Haond, M.4
-
13
-
-
0027681914
-
Analysis of Floating Substrate Effects on Intrinsic Gate Capacitance of SOI MOSFET's Using Two-Dimensional Device Simulation
-
D. Flandre, "Analysis of Floating Substrate Effects on Intrinsic Gate Capacitance of SOI MOSFET's Using Two-Dimensional Device Simulation", IEEE Trans. Electron Devices vol. 40, n. 10, pp. 1789-1796, 1993.
-
(1993)
IEEE Trans. Electron Devices
, vol.40
, Issue.10
, pp. 1789-1796
-
-
Flandre, D.1
-
16
-
-
0030081408
-
-
D. De Ceuster, D. Flandre, J. P. Colinge and S. Cristoloveanu, Electronics Letters, vol. 32, pp. 278, 1996.
-
(1996)
Electronics Letters
, vol.32
, pp. 278
-
-
De Ceuster, D.1
Flandre, D.2
Colinge, J.P.3
Cristoloveanu, S.4
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