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Volumn , Issue , 2001, Pages 130-135

Analog circuit design using graded-channel SOI nMOSFETs

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); ANALOG CIRCUITS; DESIGN; ELECTRIC BREAKDOWN; MOSFET DEVICES; OPERATIONAL AMPLIFIERS; RECONFIGURABLE HARDWARE; SILICON ON INSULATOR TECHNOLOGY; SYSTEMS ANALYSIS; TRANSCONDUCTANCE; TRANSISTORS;

EID: 84860991457     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SBCCI.2001.953015     Document Type: Conference Paper
Times cited : (5)

References (16)
  • 1
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    • Fully-Depleted SOI CMOS for Analog Applications
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    • (1998) IEEE Trans. Electron Devices , vol.45 , Issue.5 , pp. 1010-1016
    • Colinge, J.P.1
  • 2
    • 0028548799 scopus 로고
    • Comparison of SOI versus bulk Performances of CMOS micropower single-stage OTAs
    • D. Flandre, J. P. Eggermont, D. De Ceuster and P Jespers, "Comparison of SOI versus bulk Performances of CMOS micropower single-stage OTAs", Electronics Letters, vol. 30, n. 23, pp. 1933-1934, 1994.
    • (1994) Electronics Letters , vol.30 , Issue.23 , pp. 1933-1934
    • Flandre, D.1    Eggermont, J.P.2    De Ceuster, D.3    Jespers, P.4
  • 4
    • 0033751937 scopus 로고    scopus 로고
    • Analog Performance and Application of Graded-Channel Fully Depleted SOI MOSFETs
    • M. A. Pavanello, J. A. Martino and D. Flandre, "Analog Performance and Application of Graded-Channel Fully Depleted SOI MOSFETs", Solid-State Electronics, vol. 44, n. 7, p. 1219-1222, 2000.
    • (2000) Solid-State Electronics , vol.44 , Issue.7 , pp. 1219-1222
    • Pavanello, M.A.1    Martino, J.A.2    Flandre, D.3
  • 5
    • 0033736623 scopus 로고    scopus 로고
    • Graded-Channel Fully Depleted Silicon-On-Insulator nMOSFET for Reducing the Parasitic Bipolar Effects
    • M. A. Pavanello, J. A. Martino and D. Flandre, "Graded-Channel Fully Depleted Silicon-On-Insulator nMOSFET for Reducing the Parasitic Bipolar Effects", Solid-State Electronics, vol. 44, n. 6, p. 917-922, 2000.
    • (2000) Solid-State Electronics , vol.44 , Issue.6 , pp. 917-922
    • Pavanello, M.A.1    Martino, J.A.2    Flandre, D.3
  • 6
    • 0033639792 scopus 로고    scopus 로고
    • An Asymmetric Channel SOI nMOSFET for Reducing Parasitic Effects and Improving Output Characteristics
    • M. A. Pavanello, J. A. Martino, V. Dessard and D. Flandre, "An Asymmetric Channel SOI nMOSFET for Reducing Parasitic Effects and Improving Output Characteristics", Electrochemical and Solid-State Letters, vol. 1, p. 50-52, 2000.
    • (2000) Electrochemical and Solid-State Letters , vol.1 , pp. 50-52
    • Pavanello, M.A.1    Martino, J.A.2    Dessard, V.3    Flandre, D.4
  • 7
    • 0030127650 scopus 로고    scopus 로고
    • Modeling and Application of Fully Depleted SOI MOSFETs for Low Voltage, Low Power Analogue CMOS Circuits
    • D. Flandre, L. F. Ferreira, P. G. A. Jespers and J. P. Colinge, "Modeling and Application of Fully Depleted SOI MOSFETs for Low Voltage, Low Power Analogue CMOS Circuits", Solid-State Electronics, vol. 39, n. 4, pp. 455-460, 1996.
    • (1996) Solid-State Electronics , vol.39 , Issue.4 , pp. 455-460
    • Flandre, D.1    Ferreira, L.F.2    Jespers, P.G.A.3    Colinge, J.P.4
  • 10
    • 0030241117 scopus 로고    scopus 로고
    • D Based Methodology for the Design of CMOS Analog Circuits and Its Application to the Synthesis of a Silicon-On-Insulator Micropower OTA
    • D Based Methodology for the Design of CMOS Analog Circuits and Its Application to the Synthesis of a Silicon-On-Insulator Micropower OTA", IEEE Journal of Solid-State Circuits, vol. 31, n. 9, pp. 1314-1319, 1996.
    • (1996) IEEE Journal of Solid-State Circuits , vol.31 , Issue.9 , pp. 1314-1319
    • Silveira, F.1    Flandre, D.2    Jespers, P.G.A.3
  • 11
    • 0000903370 scopus 로고    scopus 로고
    • Potential and modeling of 1 μm SOI CMOS operational transconductance amplifiers for applications up to 1 GHz
    • J. P. Eggermont, D. Flandre, J. P. Raskin and J. P. Colinge, "Potential and modeling of 1 μm SOI CMOS operational transconductance amplifiers for applications up to 1 GHz.", IEEE Journal of Solid-State Circuit, vol. 33, n. 4, pp. 640-643, 1998.
    • (1998) IEEE Journal of Solid-State Circuit , vol.33 , Issue.4 , pp. 640-643
    • Eggermont, J.P.1    Flandre, D.2    Raskin, J.P.3    Colinge, J.P.4
  • 13
    • 0027681914 scopus 로고
    • Analysis of Floating Substrate Effects on Intrinsic Gate Capacitance of SOI MOSFET's Using Two-Dimensional Device Simulation
    • D. Flandre, "Analysis of Floating Substrate Effects on Intrinsic Gate Capacitance of SOI MOSFET's Using Two-Dimensional Device Simulation", IEEE Trans. Electron Devices vol. 40, n. 10, pp. 1789-1796, 1993.
    • (1993) IEEE Trans. Electron Devices , vol.40 , Issue.10 , pp. 1789-1796
    • Flandre, D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.