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Journal of Applied Physics

Volumn 111, Issue 8, 2012, Pages

Effects of high temperature annealing on single crystal ZnO and ZnO devices

(8) Mtangi, W a Auret, F D a Diale, M a Meyer, W E a Chawanda, A a De Meyer, H a Janse Van Rensburg, P J a Nel, J M a

a UNIVERSITY OF PRETORIA (South Africa)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENTHALPIES; ANNEALED SAMPLES; BARRIER HEIGHTS; CURRENT VOLTAGE; CURRENT-VOLTAGE MEASUREMENTS; HIGH RESOLUTION; HIGH TEMPERATURE; HIGH-TEMPERATURE ANNEALING; REVERSE CURRENTS; REVERSE LEAKAGE CURRENT; SCHOTTKY CONTACTS; ZNO; ZNO DEVICES;

DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; LAPLACE TRANSFORMS; POWER QUALITY; ZINC OXIDE;

ANNEALING;

EID: 84860520645 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3700186 Document Type: Article

Times cited : (15)

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