A comparative study of the electrical properties of Pd/ZnO Schottky contacts fabricated using electron beam deposition and resistive/thermal evaporation techniques

Journal of Applied Physics

Volumn 110, Issue 9, 2011, Pages

  Mtangi, W ^a   Auret, F D ^a   Janse Van Rensburg, P J ^a   Coelho, S M M ^a   Legodi, M J ^a   Nel, J M ^a   Meyer, W E ^a   Chawanda, A ^a  

^a UNIVERSITY OF PRETORIA   (South Africa)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; CHARGED OXYGEN VACANCIES; COMPARATIVE STUDIES; CONDUCTION-BAND MINIMUM; CURRENT TRANSPORT MECHANISM; CURRENT VOLTAGE; E-BEAM DEPOSITION; ELECTRON BEAM DEPOSITIONS; GENERATION RECOMBINATION; HIGH VOLTAGE; I-V MEASUREMENTS; IDEALITY FACTORS; LOW VOLTAGES; REVERSE CURRENTS; REVERSE VOLTAGES; ROOM TEMPERATURE; SCHOTTKY CONTACTS; SYSTEMATIC INVESTIGATIONS; ZNO;

CHEMICAL MODIFICATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; ELECTRIC PROPERTIES; ELECTRON BEAMS; LEAKAGE CURRENTS; OXYGEN VACANCIES; PHASE TRANSITIONS; POWER QUALITY; RESISTIVE EVAPORATION; THERMIONIC EMISSION; ZINC OXIDE;

ELECTRIC RECTIFIERS;

EID: 81355163276     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3658027     Document Type: Article

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