Emission of terahertz radiation from dual grating gate plasmon-resonant emitters fabricated with InGaP/InGaAs/GaAs material systems

Journal of Physics Condensed Matter

Volumn 20, Issue 38, 2008, Pages

  Otsuji, T ^a   Meziani, Y M ^a   Nishimura, T ^a   Suemitsu, T ^a   Knap, W ^a,b   Sano, E ^c   Asano, T ^d   Popov, V V ^e  

^a TOHOKU UNIVERSITY   (Japan)

^b UNIVERSITÉ MONTPELLIER 2   (France)

^c HOKKAIDO UNIVERSITY   (Japan)

^d KYUSHU UNIVERSITY   (Japan)

^e INSTITUTE OF RADIO ENGINEERING AND ELECTRONICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROMAGNETIC WAVE EMISSION; ELECTROMAGNETIC WAVES; ELECTRONS; MATERIALS SCIENCE; OPTICAL DATA STORAGE; PLASMA OSCILLATIONS; PLASMONS;

BROADBAND TERAHERTZ; ELECTRON DENSITIES; ELECTRON LAYERS; GRATING GATE; HEMT STRUCTURE; HETERO STRUCTURES; HIGH-ELECTRON-MOBILITY; LASER ILLUMINATIONS; MATERIAL SYSTEMS; METAL LAYERS; ORDER-OF MAGNITUDES; PHOTO-GENERATED CARRIERS; PLASMON; ROOM TEMPERATURES; SELF-OSCILLATING; TERAHERTZ EMISSIONS; TERAHERTZ EMITTERS; TERAHERTZ RADIATION;

PLASMA DIAGNOSTICS;

EID: 53249133119     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/20/38/384206     Document Type: Article

References (40)

1. Tonouchi M 2007 Cutting-edge terahertz technology Nature Photon. 1 97-105
2. Hopfel R A, Vass E and Gornik E 1982 Phys. Rev. Lett. 49 1667
3. Tsui D C, Gornik E and Logan R A 1980 Solid State Commun. 35 875
4. Okisu N, Sambe Y and Kobayashi T 1986 Appl. Phys. Lett. 48 776
5. Hopfel R, Lindemann G, Gornik E, Stangl G, Gossard A C and Wiegmann W 1982 Surf. Sci. 113 118
6. Wilkinson R J et al 1992 Plasmon excitation and self-coupling in a bi-periodically modulated two-dimensional electron gas J. Appl. Phys. 71 6049-61
7. Hirakawa K, Yamanaka K, Grayson M and Tsui D C 1995 Appl. Phys. Lett. 67 2326
8. Dyakonov M and Shur M 1993 Phys. Rev. Lett. 71 2465
9. Knap W, Lusakowski J, Parenty T, Bollaert S, Cappy A, Popov V V and Shur M S 2004 Appl. Phys. Lett. 84 2331
10. Lusakowski J, Knap W, Dyakonova N and Varani L 2005 J. Appl. Phys. 97 064307
11. Dyakonova N, Teppe F, Lusakowski J, Knap W, Levinshtein M, Dmitriev A P, Shur M S, Bollaert S and Cappy A 2005 J. Appl. Phys. 97 114313
12. Mikhailov S A 1998 Phys. Rev. B 58 1517-32
13. Bakshi P et al 1999 Appl. Phys. Lett. 75 1685
14. Colombelli R, Capasso F, Gmachl C, Hutchinson A L, Sivco D L, Tredicucci A, Wanke M C, Sergent A M and Cho A Y 2001 Appl. Phys. Lett. 78 2620
15. Tredicucci A, Köhler R, Mahler L, Beere H E, Linfield E H and Ritchie D A 2005 Semicond. Sci. Technol. 20 S222
16. Ryzhii V, Satou A and Shur M 2006 IEICE Trans. Electron. E89-C 1012
17. Ryzhij V, Bannov N A and Fedirko V A 1984 Fiz. Tekh. Poluprovodn. 8 769
18. Knap W, Deng Y, Rumyantsev S and Shur M S 2002 Appl. Phys. Lett. 81 4637
19. Otsuji T, Hanabe M and Ogawara O 2004 Appl. Phys. Lett. 85 2119
20. Teppe F, Knap W, Veksler D and Shur M S 2005 Appl. Phys. Lett. 87 052107
21. El Fatimy A et al 2006 Appl. Phys. Lett. 89 131926
22. Otsuji T, Meziani Y M, Hanabe M, Ishibashi T, Uno T and Sano E 2006 Appl. Phys. Lett. 89 263502
23. Meziani Y M, Otsuji Y, Hanabe M, Ishibashi T, Uno T and Sano E 2007 Room temperature generation of terahertz radiation from a grating-bicoupled device: size effect Appl. Phys. Lett. 90 061105
24. Meziani Y M, Otsuji T, Hanabe M and Sano E 2007 Threshold behavior of photoinduced plasmon-resonant self-oscillation in a new interdigitated grating gates device Japan. J. Appl. Phys. 46 2409-12
25. Suemitsu T, Meziani Y M, Hosono Y, Hanabe M, Otsuji T and Sano E 2007 Novel plasmon-resonant terahertz-wave emitter using a double-decked HEMT structure 65th Device Research Conf. (DRC) Dig. (Notre Dame, IN, June 2007) pp157-8
26. Otsuji T, Meziani Y M, Hanabe M, Nishimura T and Sano E 2007 Emission of terahertz radiation from InGaP/InGaAs/GaAs grating-bicoupled plasmon-resonant emitter Solid State Electron. 51 1319-7
27. Meziani Y M, Hanabe M, Otsuji T and Sano E 2008 Phys. Status Solidi c 5 282
28. Meziani Y M, Handa H, Knap W, Otsuji T, Sano E, Popov V V, Tsymbalov G M, Coquillat D and Teppe F 2008 Room temperature terahertz emission from grating coupled two-dimensional plasmons Appl. Phys. Lett. 92 201108
29. Nishimura T et al 2008 Broadband trahertz emission from dual-grating gate HEMTs-mechanism and emission spectral profile 66th Device Research Conf. (DRC) Dig. (Santa Barbara, CA, June 2008) pp263-4
30. Otsuji T, Hanabe M, Nishimura T and Sano E 2006 Opt. Express 14 4815
31. Hanabe M, Nishimura T, Miyamoto M, Otsuji T and Sano E 2006 Structure-sensitive design for wider tunable operation of terahertz plasmon-resonant photomixer IEICE Trans. Electron. E89-C 985-92
32. Dyakonov M and Shur M 1996 Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid IEEE Trans. Electron. Devices 43 380-7
33. Hanabe M, Otsuji T, Ishibashi T, Uno T and Ryzhii V 2005 Modulation effects of photocarriers on the terahertz plasma-wave resonance in high-electron-mobility transistors under interband photoexcitation Japan. J. Appl. Phys. 44 3842-7
34. Perera A G U, Matsik S G, Liu H C, Gao M, Buchanan M, Schaff W J and Yeo W 2000 Appl. Phys. Lett. 77 741
35. Popov V V, Polischuk O V, Teperik T V, Peralta X G, Allen S J, Horing N J M and Wanke M C 2003 J. Appl. Phys. 94 3556
36. Popov V V, Tsymbalov G M and Horing N J M 2006 J. Appl. Phys. 99 124303
37. Cheremisin M V and Samsonidze G G 2006 Terahertz plasma wave generation in ultrashort-channel field effect transistors: the essential role of carrier drift velocity saturation J. Appl. Phys. 99 123707
38. Sano E 2002 Simulation of carrier transport across heterojunctions based on drift-diffusion model incorporating an effective potential Japan. J. Appl. Phys. 41 L1306-8
39. Takanashi Y, Takahata K and Muramoto Y 1999 Characteristics of InAlAs/InGaAs high-electron-mobility transistors under illumination with modulated light IEEE Trans. Electron. Devices 46 2271-7
40. Shur M S and Lu J-Q 2000 Terahertz sources and detectors using two-dimensional electronic fluid in high electron-mobility transistors IEEE Trans. Microw. Theory Tech. 48 750-6