Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures

Applied Physics Letters

Volumn 96, Issue 4, 2010, Pages

  Muravjov, A V ^a,b   Veksler, D B ^a   Popov, V V ^c   Polischuk, O V ^c   Pala, N ^d   Hu, X ^e   Gaska, R ^e   Saxena, H ^f   Peale, R E ^f   Shur, M S ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

^c INSTITUTE OF RADIO ENGINEERING AND ELECTRONICS   (Russian Federation)

^d The Department of Electrical and Computer Engineering   (United States)

^e SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

^f UNIVERSITY OF CENTRAL FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; GATE ELECTRODES; GATE VOLTAGES; METAL GRATING; NITRIDE TRANSISTORS; PLASMON RESONANCES; RECIPROCAL LATTICE VECTORS; RESONANCE FREQUENCIES; TEMPERATURE DEPENDENCE; TERAHERTZ ABSORPTION; TERAHERTZ APPLICATIONS; TERAHERTZ RADIATION; TERAHERTZ TRANSMISSION; TUNABILITIES; WAVE VECTOR;

GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; OPTICAL DATA STORAGE; PLASMONS; RESONANCE;

TERAHERTZ WAVES;

EID: 75749088077     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3292019     Document Type: Article

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