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Applied Physics Letters

Volumn 99, Issue 6, 2011, Pages

Formation of m-plane InGaN/GaN quantum dots using strain engineering of AlGaN/AlN interlayers

(4) Yang, Xuelin a Arita, Munetaka a Kako, Satoshi a Arakawa, Yasuhiko a,b

a UNIVERSITY OF TOKYO (Japan)

b INSTITUTE OF INDUSTRIAL SCIENCE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; COMPRESSIVE STRAIN; GAN LAYERS; INGAN QUANTUM DOTS; INGAN/GAN; M-PLANE; PHOTOLUMINESCENCE EMISSION; QUANTUM-CONFINEMENT STARK EFFECTS; ROOM TEMPERATURE; SINGLE-PHOTON SOURCE; STRAIN ENGINEERING;

GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SPECTROSCOPY; STRUCTURAL ANALYSIS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84860389060 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3626589 Document Type: Article

Times cited : (12)

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