Effect of InGaN quantum dot size on the recombination process in light-emitting diodes

Applied Physics Letters

Volumn 92, Issue 25, 2008, Pages

  Park, Il Kyu ^a   Kwon, Min Ki ^a   Cho, Chu Young ^a   Kim, Ja Yeon ^a   Cho, Chang Hee ^a   Park, Seong Ju ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; OPTICAL DESIGN; OPTICAL WAVEGUIDES; PIEZOELECTRICITY; QUANTUM ELECTRONICS;

INPUT CURRENTS; OPTICAL OUTPUT POWER; PIEZO-ELECTRIC FIELDS; QD SIZE; QUANTUM DOT; QUANTUM-CONFINEMENT; QUANTUM-DOT SIZE; RECOMBINATION PROCESSES; SCREENING EFFECTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 46049101614     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2951607     Document Type: Article

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