Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28

Applied Physics Letters

Volumn 100, Issue 17, 2012, Pages

  Weis, C D ^a,b   Lo, C C ^a,c   Lang, V ^d   Tyryshkin, A M ^e   George, R E ^d   Yu, K M ^a   Bokor, J ^c   Lyon, S A ^e   Morton, J J L ^d   Schenkel, T ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d UNIVERSITY OF OXFORD   (United Kingdom)

^e Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE; ELECTRICAL ACTIVATION; ELECTRON SPIN RESONANCE MEASUREMENTS; ION IMPLANTED; ISOTOPICALLY ENRICHED; PULSED ELECTRON; SPIN COHERENCE; SPIN QUBIT; SPIN RESONANCE; THERMAL-ANNEALING;

ION IMPLANTATION;

BISMUTH;

EID: 84860321950     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4704561     Document Type: Article

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