Annealing effect on thermoelectric properties of Bi implanted Si thin film

International Conference on Thermoelectrics, ICT, Proceedings

Volumn , Issue , 2001, Pages 306-309

  Yamamoto, A ^a   Miki, K ^a   Tanoue, H ^a   Lee, C H ^a   Takazawa, H ^a   Ohta, T ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMS; BISMUTH; CHEMICAL ACTIVATION; ELECTRIC CONDUCTIVITY OF SOLIDS; HALL EFFECT; ION IMPLANTATION; PRECIPITATION (CHEMICAL); SEEBECK EFFECT; THERMAL EFFECTS; THERMOELECTRICITY; TRANSPORT PROPERTIES;

BISMUTH IMPLANTED SILICON THIN FILM; ELECTRICAL ACTIVATION; SILICON CRYSTALS; THERMAL ANNEALING; THERMOELECTRIC PROPERTIES;

SEMICONDUCTING SILICON;

EID: 0035708738     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)