Bismuth ion-implanted solid-phase epitaxially grown shallow junction for metal-oxide-semiconductor field-effect transistors

Applied Physics Letters

Volumn 86, Issue 3, 2005, Pages 1-3

  Tavakoli, Shahram Ghanad ^a   Baek, Sungkweon ^a   Chang, Hyo Sik ^a   Moon, Dae Won ^b   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH; ELECTRODES; EPITAXIAL GROWTH; GATES (TRANSISTOR); ION IMPLANTATION; LEAKAGE CURRENTS; LOW TEMPERATURE EFFECTS; RAPID THERMAL ANNEALING; SEMICONDUCTOR DOPING; SILICON WAFERS;

DOPANTS; DRAIN EXTENSIONS; GATE STACKS; SURFACE CONTAMINANTS;

MOSFET DEVICES;

EID: 17044419182     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1852731     Document Type: Article

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