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Volumn 100, Issue 17, 2012, Pages

Stress relaxation and critical thickness for misfit dislocation formation in (101̄0) and (3031̄) InGaN/GaN heteroepitaxy

Author keywords

[No Author keywords available]

Indexed keywords

BASAL PLANES; CATHODOLUMINESCENCE IMAGING; CRITICAL THICKNESS; DISLOCATION FORMATION; INGAN/GAN; M-PLANE; NON-BASAL PLANE; NON-POLAR; PLASTIC RELAXATION; PRISMATIC SLIP; SEMIPOLAR; SLIP PLANE;

EID: 84860320812     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4707160     Document Type: Article
Times cited : (37)

References (19)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.