Strain relaxation mechanism of InGaN thin film grown on m-GaN

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 2, 2011, Pages 444-446

  Hanada, Takashi ^a,b   Shimada, Taka aki ^a   Ji, Shi Yang ^a   Hobo, Kenji ^a   Liu, Yuhuai ^a,b   Matsuoka, Takashi ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

InGaN; M plane; Misfit dislocation; Strain relaxation

Indexed keywords

ASYMMETRIC DISTRIBUTION; ATOMIC DISPLACEMENT; CRITICAL CONDITION; GAN SUBSTRATE; INGAN; M-PLANE; METAL-ORGANIC VAPOR PHASE EPITAXY; MISFIT DISLOCATION; MISFIT DISLOCATIONS; OFF-AXIS; ROCKING CURVES; STRAIN RELAXATION MECHANISM;

DISTRIBUTION FUNCTIONS; GALLIUM NITRIDE; HETEROJUNCTIONS; LANTHANUM COMPOUNDS; STRAIN RELAXATION; X RAY DIFFRACTION;

GALLIUM ALLOYS;

EID: 79951698983     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201000565     Document Type: Article

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