Nucleation control of cubic silicon carbide on 6H-substrates

Crystal Growth and Design

Volumn 12, Issue 1, 2012, Pages 197-204

  Vasiliauskas, Remigijus ^a   Marinova, Maya ^b   Hens, Philip ^c   Wellmann, Peter ^c   Syväjärvi, Mikael ^a   Yakimova, Rositza ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^c UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CUBIC SILICON CARBIDE; DEFECT-FREE SURFACES; GROWTH CELLS; GROWTH PARAMETERS; HOMOEPITAXIAL; HOMOEPITAXIAL GROWTH; LOW TEMPERATURES; MODELING RESULTS; NUCLEATION CONTROL; NUCLEATION MODES; SIC GROWTH; SPIRAL GROWTH; STRUCTURAL STUDIES; SUBLIMATION EPITAXY; SUBSTRATE TEMPERATURE; TEMPERATURE RANGE;

CRYSTALLOGRAPHY; EPITAXIAL GROWTH; NUCLEATION; SUBSTRATES; SUPERSATURATION;

SILICON CARBIDE;

EID: 84855391656     PISSN: 15287483     EISSN: 15287505     Source Type: Journal    
DOI: 10.1021/cg200929r     Document Type: Article

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