Active pixel sensors: The sensor of choice for future space applications

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6744, Issue , 2007, Pages

  Leijtensu, Johan ^a   Theuwissen, Albert ^b   Rao, Padmakuimar R ^b   Xinyang, Wang ^b   Ning, Xie ^b  

^a TNO   (Netherlands)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

0,18 micron; APS; CMOS; Low noise; Microned; Radiation tolerant; Sunsensor; TNO; TU Delft

Indexed keywords

CHARGE COUPLED DEVICES; INFRARED DETECTORS; PIXELS; RADIATION; SPACE APPLICATIONS;

APS; SUNSENSORS; TNO; TU-DELFT;

IMAGE SENSORS;

EID: 42449149062     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.735512     Document Type: Conference Paper

References (5)

1. Ning Xie, CMOS image sensor in 0.18 μm Technology for a Micro-Digital Sun Sensor , Graduation thesis Delft University of technology, July 2007.
2. Xinyang Wang, Padmakumar R. Rao, Adri Mierop, Albert J.P. Theuwissen "Random Telegraph Signal in CMOS Image Sensor Pixels", IEEE International Electron Device Meeting (IEDM), US, Dec 2006.
3. Xinyang Wang, Padmakumar R. Rao and Albert J.P. Theuwissen "Fixed-Pattern Noise Induced by Transmission Gate in Pinned 4T CMOS Image Sensor Pixels", European Solid-State Device Research Conference (ESSDERC), Switzerland, Sep 2006.
4. Padmakumar R. Rao, Xinyang Wang, Adri J. Mierop and Albert J.P. Theuwissen, "Gamma-Ray Irradiation Effects on CMOS Image Sensors in Deep Sub-Micron Technology", International Image Sensor Workshop, Ogunquit, June2007.
5. Padmakumar R. Rao, Xinyang Wang, Albert J.P. Theuwissen, "Radiation Hardness of Deep-Submicron CMOS Technology Evaluated by Gated-Diode Measurements", Sense of contact-2007.