Fixed-pattern noise induced by transmission gate in pinned 4T CMOS image sensor pixels

ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference

Volumn , Issue , 2006, Pages 331-334

  Wang, Xinyang ^a   Rao, Padmakumar R ^a   Theuwissen, Albert J P ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; CMOS INTEGRATED CIRCUITS; DARK CURRENTS; IMAGE SENSORS; LEAKAGE CURRENTS; PHOTODIODES; PIXELS;

FIXED-PATTERN NOISE (FPN); SIGNAL DEGRADATION; TRANSMISSION GATE (TG);

ACOUSTIC NOISE;

EID: 39549097620     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDER.2006.307705     Document Type: Conference Paper

References (6)

1. R.M.Guidash, et al. "A 0.6-μm CMOS pinned photodiode color imager technology" IEDM Tech. Dig., pp. 927-929, 1997.
2. Hyuck In Kwon, In Man Kang, Byung-Gook Park, Jong Duk Lee, Sang Sik Park and Hyuck In Kwon, "The analysis of dark signals in the CMOS APS imagers from the characterization of test structures" IEEE Transactions on Electron Devices, vol.51, pp. 178-184, Feb 2004.
3. Ching-Chun Wang and Sodini, C.G "The effect of hot carriers on the operation of CMOS active pixel sensors" IEDM Tech. Dig., pp. 5.3.1-5.3.4, Dec 2001.
4. S.S.Chi et al. "Photonic gated-diode method for extracting the energy-dependent and the spatical distribution of interface states in MOSFETs" Jounal of the Korean Physical Society, Vol. 43, pp. 884-891, Nov 2003.
5. S.M.Sze, Semiconductor Device Physics and Technology,2nd ed., JOHN WILEY & SONS, INC, 2002, pp. 79-80.
6. N.V.Loukianova, et al. "Leakage current modeling of test structure for characterization of dark current in CMOS image sensors" IEEE Transcation on Electron Devices, vol.50, pp. 77-84, Jan 2003.