Bending effect of organic field-effect transistors with polyimide gate dielectric layers

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 4 B, 2005, Pages 2841-2843

  Sekitani, Tsuyoshi ^a   Iba, Shingo ^a   Kato, Yusaku ^a   Someya, Takao ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

Bending experiment; Organic transistor; Pentacene; Polyimide gate dielectric layer

Indexed keywords

BENDING (DEFORMATION); CAPACITANCE; CARRIER MOBILITY; COMPRESSIVE STRESS; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; POLYIMIDES; TENSILE STRESS;

BENDING EXPERIMENT; ORGANIC TRANSISTORS; PENTACENE; POLYIMIDE GATE DIELECTRIC LAYERS;

FIELD EFFECT TRANSISTORS;

EID: 21244489986     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.2841     Document Type: Conference Paper

References (12)

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7. In this work, strain can be estimated from this equation, D/2R, where D represents the thickness of a base film and R the bending radius, and the Poisson ratio (v) of polyimide, 0.4, is almost the same as that of PEN. Additionally, it is assumed that D is larger than the thickness of the polyimide gate dielectric layers. A detailed explanation is given in ref. 4.
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12. 4,7) Furthermore, such strains also induce the change in the thickness of polyimide gate dielectric layers due to the Poisson effect. Namely, thickness increases on compression and decreases on tension. This deformation can be estimated using the Poisson model equation, Dv/2R(1 - v). These two changes of the structural parameters mentioned above are responsible for the intrinsic changes in DC characteristics.