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Volumn 95, Issue 22, 2009, Pages

Low-voltage pentacene organic field-effect transistors with high- κ HfO2 gate dielectrics and high stability under bias stress

(4) Zhang, Xiao Hong a Tiwari, Shree Prakash a Kim, Sung Jin a Kippelen, Bernard a

a GEORGIA INSTITUTE OF TECHNOLOGY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS STRESS; CAPACITANCE DENSITY; DIELECTRIC LAYER; HAFNIUM DIOXIDE GATE DIELECTRIC; HIGH STABILITY; LOW THRESHOLD VOLTAGE; LOW-VOLTAGE; OPERATING VOLTAGE; ORGANIC FIELD-EFFECT TRANSISTORS; PENTACENES; PHOSPHONIC ACIDS; SUBTHRESHOLD SLOPE;

DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); HAFNIUM; HAFNIUM COMPOUNDS; HOLE MOBILITY; MOS CAPACITORS; ORGANIC ACIDS; SEMICONDUCTING ORGANIC COMPOUNDS;

GATE DIELECTRICS;

EID: 71949118925 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3269577 Document Type: Article

Times cited : (50)

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