GaSb quantum dot morphology for different growth temperatures and the dissolution effect of the GaAs capping layer

Journal of Physics D: Applied Physics

Volumn 43, Issue 6, 2010, Pages

  Kamarudin, M Ahmad ^a   Hayne, M ^a   Zhuang, Q D ^a   Kolosov, O ^a   Nuytten, T ^b   Moshchalkov, V V ^b   Dinelli, F ^c  

^a LANCASTER UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AFM; CAPPING LAYER; DOT DENSITY; DOT MORPHOLOGY; GAAS; HIGH DOT DENSITY; HIGHLY SENSITIVE; LOW TEMPERATURES; PHOTOLUMINESCENCE SPECTRUM; QUANTUM DOT MORPHOLOGY; QUANTUM DOTS;

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; DISSOLUTION; GALLIUM ALLOYS; GALLIUM ARSENIDE; GROWTH TEMPERATURE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MORPHOLOGY; OPTICAL WAVEGUIDES; SEMICONDUCTING GALLIUM;

SEMICONDUCTOR QUANTUM DOTS;

EID: 76649123609     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/6/065402     Document Type: Article

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